GaN RF Power Amplifier Applications Intern

GaN RF Power Amplifier Intern Job Description

The engineering intern will be working at the Morgan Hill CA Design Center alongside a highly knowledgeable team of RF engineers and will initially be tasked with device characterization of MACOM’s high power GaN transistor products geared towards Base Station market. As an intern you will learn to operate the RF test bench software and Digital Predistortion testers, handling RF devices, biasing devices, capturing accurate RF data, and performing a limited amount of data processing. This device characterization activity will be in support of current product development and R D activities.

A follow-on activity will task the intern to design an impedance matching network for a GaN device, using either MWO or ADS design software, in order to match the device to a 50 ohm environment. The intern will be expected to layout the impedance matching network in AutoCAD, have it fabricated and will be tasked to assemble, solder components, and tune the circuit on the RF bench.

During the 12 weeks each Intern will: > Be given an individual and well-defined project with set outcome goals > Gain hands on experience > Receive excellent training and ongoing supervision > Be invited to attend an intern webinar series > Attend networking/social events > Attend and present at Poster Session about each Interns project successes and pitfalls > Receive formal, written feedback