GaN Device Characterization & Modeling Intern

GaN RF Power Amplifier Intern Jo b Description The RF Power Amplifier group at Lincoln, RI, comprises of design and applications teams working on GaN transistor products geared towards RF Energy, Aerospace and Defense, Multi Market, Base Station and 5G markets. As an intern you will get hands-on experience working on one or more of these products alongside a highly knowledgeable, innovative and fun-loving team.

In this introductory role, you will be exposed to different areas of work such as design (mostly electrical but some mechanical as well), assembly of PCBs, manufacturing fixtures, RF testing and characterization of transistors and evaluation boards etc. We are looking for a highly self-driven individual with good understanding of fundamental electronics and semiconductor principles and a passion for learning.

Responsibilities

Design, duplicate and analyze RF microwave test boards Tune PCBs to achieve consistent RF performance Set up and perform lab RF measurements Prepare presentations with clear data analysis and conclusions Document all aspects of the fixture – PCBs, assembly, BOM, tuning etc.